SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2782-2786

Highly sensitive metal-insulator-semiconductor field-effect transistor sensors for detecting carbon monoxide gas using porous platinum and tungsten oxide thin films

(3) Fukuda, H a Zohnishi, R a Nomura, S a

a MURORAN INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Carbon monoxide; Gas sensor; Metal insulator semiconductor structure; MISFET; Platinum; Tungsten oxide

Indexed keywords

CARBON MONOXIDE; FIELD EFFECT TRANSISTORS; GAS ADSORPTION; GAS DETECTORS; METAL INSULATOR BOUNDARIES; MIS DEVICES; MISFET DEVICES; PLATINUM COMPOUNDS; THIN FILMS; TUNGSTEN COMPOUNDS;

SPILLOVER EFFECTS;

CHEMICAL SENSORS;

EID: 0035300816 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.2782 Document Type: Article

Times cited : (11)

References (22)

1
- 0002250337
- (1975) Appl. Phys. Lett. , vol.26 , pp. 55
- Lundström, I.¹ Shivaraman, M.S.² Lundkvist, L.³

2
- 0019899403
- (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 123
- Poteat, T.L.¹ Lalevic, B.²

3
- 0000733501
- (1983) Appl. Phys. Lett. , vol.43 , pp. 839
- Winquist, F.¹ Spetz, A.² Armgarth, M.³ Nylander, C.⁴ Lundström, I.⁵

4
- 33845680394
- (1990) J. Appl. Phys. , vol.68
- Chistofides, C.¹ Mandelis, A.²

5
- 1542316520
- (1998) Appl. Phys. Lett. , vol.73 , pp. 2524
- Bogner, M.¹ Fuchs, A.² Scharnagl, K.³ Winter, R.⁴ Doll, T.⁵ Eisele, I.⁶

6
- 0024872778
- (1989) Sens. & Actuators , vol.B20 , pp. 301
- Lee, D.D.¹ Chung, W.Y.²

7
- 0027641412
- (1993) J. Electrochem. Soc. , vol.140
- Kang, W.P.¹ Kim, C.K.²

8
- 0031244679
- (1997) Appl. Phys. Lett. , vol.71 , pp. 2358
- Phani, A.R.¹

9
- 0001140360
- (1998) J. Appl. Phys. , vol.83 , pp. 3541
- Manno, D.¹ Micocci, G.² Serra, A.³ Tepore, A.⁴

10
- 0032625530
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 914
- Gurbuz, Y.¹ Kang, W.P.² Davidson, J.L.³ Kerns, D.V.⁴

11
- 36449007990
- (1994) J. Appl. Phys. , vol.76 , pp. 4467
- Gaggoitti, G.¹ Galdikas, A.² Kačiulis, S.³ Mattogno, G.⁴ Šetkus, A.⁵

12
- 0004551025
- (1991) Sens. & Actuators , vol.B4 , pp. 78
- Scherbaum, K.D.¹ Kirner, U.K.² Geiger, J.F.³ Gopel, W.⁴

13
- 0004602331
- Business Center for Academic Societies Japan Tokyo
- (1997) Ext. Abstr. 1997 Int. Conf. on Solid State Devices and Materials , pp. 376
- Fukuda, H.¹ Seo, H.² Kasama, K.³ Endoh, T.⁴ Nomura, S.⁵

14
- 0001404593
- (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 1100
- Fukuda, H.¹ Seo, H.² Kasama, K.³ Endoh, T.⁴ Nomura, S.⁵

15
- 0032050377
- (1998) J. Electrochem. Soc. , vol.145 , pp. 1346
- Davazoglou, D.¹ Georgouleas, K.²

16
- 0032287382
- (1998) J. Electrochem. Soc. , vol.145 , pp. 4219
- Chu, C.W.¹ Deen, M.J.² Hill, R.H.³

17
- 0000782840
- (1999) Appl. Phys. Lett. , vol.75 , pp. 1541
- Lee, S.-H.¹ Cheong, H.M.² Tracy, C.E.³ Mascarenhas, A.⁴ Czanderma, A.W.⁵ Deb, S.K.⁶

18
- 0000866366
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3908
- Lee, S.-H.¹ Cheong, H.M.² Tracy, C.E.³ Mascarenhas, A.⁴ Pitts, J.R.⁵ Jorgensen, G.⁶ Deb, S.K.⁷

19
- 0000229945
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1194
- Kreisel, J.¹ Pignard, S.² Vincent, H.³ Senateur, J.P.⁴

20
- 0001515880
- (1993) Appl. Phys. Lett. , vol.63 , pp. 421
- Kang, W.P.¹ Kim, C.K.²

21
- 0032110801
- (1998) J. Appl. Phys. , vol.84 , pp. 44
- Johansson, M.¹ Lundström, I.² Ekedahl, L.-G.³

22
- 0003675250
- (John Wiley & Sons, New York) Chap. 5
- (1985) Semiconductor Devices Physics and Technology , pp. 205
- Sze, S.M.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.