ESR and PL characterization of point defects in CuGaSe2 single crystals

Solar Energy Materials and Solar Cells

Volumn 67, Issue 1-4, 2001, Pages 273-278

  Nishi, Takao ^a   Katsumata, Yuji ^a   Sato, Katsuaki ^a   Miyake, Hideto ^b  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b MIE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER COMPOUNDS; CRYSTAL GROWTH; ELECTRON SPIN RESONANCE SPECTROSCOPY; PARAMAGNETISM; PHOTOLUMINESCENCE; POINT DEFECTS; SINGLE CRYSTALS;

COPPER GALLIUM SELENIDE; VACANCIES;

SOLAR ABSORBERS;

EID: 0035283798     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00292-0     Document Type: Article

References (16)

1. Rai R., Gupta S.K., Suri D.K., Ali S.Z. Phys. Stat. Sol. (B). 124:1984;K167.
2. Birkholz M., Kanschat P., Weiss T., Czerwensky M., Lips K. Phys. Rev. B. 59:1999;12268.
3. Sato K., Nishikawa N., Aksenov I., Shinzato T., Nakanishi H. Jpn. J. Appl. Phys. 35:1996;2061.
4. H. Miyake, Single crystal growth of ternary and multinary compounds, in: I. Minoru, ed., Recent Development of Bulk Crystal Growth, Vol. 9, Research Signpost, Trivandrum, India, 1998, pp. 271-278.
5. 2 epitaxial films - molecular beam epitaxial growth and intrinsic properties, in: Proceedings of the ICTMC11, R.D. Tomlinson, ed., Institute of Physics Conference, Series 152, Institute of Physics Publishing, Salford U.K., 1998, pp. 221-227.
6. Noufi R., Powell R.C., Matson R.J. Solar Cells. 21:1987;55.
7. Hollingsworth R.E., Sites J.R. Solar Cells. 16:1986;457.
8. Medvedkin G.A., Magomedov M.A. J. Appl. Phys. 82:1997;4013.
9. Medvedkin G.A., Yakushev M.V., Hill A.E., Pilkington R.D., Tomlinson R.D. Cryst. Res. Technol. 31:1996;209.
10. Boiko M.E., Medvedkin G.A. Sol. Energy Mater. Sol. Cells. 41/42:1996;307.
11. Setzler S.D., Moldovan M., Yu Zhonghai, Myers T.H., Giles N.C., Halliburton L.E. Appl. Phys. Lett. 70:1997;2274.
12. Wertz J.E., Orton J.W., Auzins P. Discuss. Faraday Soc. 31:1961;140.
13. Zhang S.B., Wei S.H., Zunger A. Phys. Rev. B. 57:1998;9642.
14. Neumann H. Cryst. Res. Technol. 18:1983;901.
15. Yamada A., Fons P., Niki S., Shibata H., Obara A., Makita Y., Oyanagi H. J. Appl. Phys. 81:1997;2794.
16. Susaki M., Miyauchi T., Horinaka H., Yamamoto N. Jpn. J. Appl. Phys. 17:1978;1555.