Extrinsic photoresponse and photoluminescence of CuInSe2 crystals grown with a deviation from valence stoichiometry

Journal of Applied Physics

Volumn 82, Issue 8, 1997, Pages 4013-4019

  Medvedkin, G A ^a   Magomedov, M A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS; STOICHIOMETRY;

BAND EDGE MODULATION; COPPER INDIUM SELENIDE; EXTRINSIC PHOTORESPONSE; SPECTRAL BAND RESOLUTION; VALENCE STOICHIOMETRY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031245026     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365710     Document Type: Article

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