Effect of Fermi level motion on the optical, ESR and transport properties of CuInSe2

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 A, 1996, Pages 2061-2067

  Sato, Katsuaki ^a   Nishikawa, Nobuyuki ^a,c   Aksenov, Igor ^a,d   Shinzato, Takeshi ^a   Nakanishi, Hisayuki ^b  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

^d ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

CuInSe2; ESR; Fe impurity; Fermi level; Free carrier absorption; Inter valence band absorption

Indexed keywords

ANNEALING; BAND STRUCTURE; CRYSTAL GROWTH; ELECTRON ABSORPTION; ELECTRON ENERGY LEVELS; ELECTRON SPIN RESONANCE SPECTROSCOPY; FERMI LEVEL; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; OPTICAL PROPERTIES; PARAMAGNETIC RESONANCE; TRANSPORT PROPERTIES;

ANNEALING INDUCED MOTION; CHARGED STATES; COPPER INDIUM SELENIDE; ENERGY POSITIONS; FERMI LEVEL MOTION; FREE CARRIER ABSORPTION; FREE HOLE ABSORPTION; INTER VALENCE BAND ABSORPTION; IRON IMPURITY; NORMAL FREEZING TECHNIQUES;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 0030125525     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2061     Document Type: Article

References (30)

1. J. L. Shay and J. H. Wernick: Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Application (Pergamon, Oxford, 1975) p. 118.
2. I. Aksenov and K. Sato: Jpn. J. Appl. Phys. 31 (1992) 2352.
3. S. Endo, T. Irie and H. Nakanishi: Sol. Cells 16 (1986) 1.
4. J.A. Groenink and P.H. Janse: Z. Phys. Chem. 110 (1978) 17.
5. H. Neumann: Sol. Cells 16 (1986) 317.
6. W. Kaiser, R. J. Collins and H. Y. Fan: Phys. Rev. 91 (1953) 1380.
7. R. Braunstein and E. O. Kane: J. Phys. Chem. Solids 23 (1962) 1423.
8. H. Neumann, H. Sobotta, W. Kissinger, V. Riede and G. Kuhn: Phys. Status Solidi B 108 (1981) 483.
9. W. G. Spitzer and J. M. Whelan: Phys. Rev. 114 (1959) 59.
10. J. I. Pankove: Optical Processes in Semiconductors (Dover, NewYork, 1971) p. 129.
11. J. M. Baranowski, J. W. Allen and G. L. Pearson: Phys. Rev. 160 (1967) 627.
12. J. I. Pankove and E. K. Annavedder: J. Appl. Phys. 36 (1965) 3948.
13. S. Visvanathan: Phys. Rev. 120 (1960) 379.
14. S. M. Wasim: Sol. Cells 16 (1986) 289.
15. K. Sato and I. Aksenov: Proc. 9th Int. Conf. Ternary and Multinary Compounds, Yokohama 1993, Jpn. J. Appl. Phys. 32 (1993) Suppl. 32-3, p. 481.
16. I. Aksenov, N. Nishikawa and K. Sato: J. Appl. Phys. 74 (1993) 3811.
17. N. Nishikawa, T. Kai, I. Aksenov and K. Sato: Jpn. J. Appl. Phys. 34 (1995) L223.
18. W. C. Holton, M. de Wit, T. L. Estle, B. Bischer and J. Schneider: Phys. Rev. 169 (1968) 359.
19. H. H. Wickman, M. P. Klien and Shirley: J. Chem. Phys. 42 (1965) 2113.
20. H. J. von Bardeleben, A. Goltzene, C. Schwab and R. S. Feigelson: Phys. Rev. B 5 (1980) 1757.
21. U. Kaufmann: Solid State Commun. 19 (1976) 213.
22. J. M. Tchapkui-Niat, A. Goltzene and C. Schwab: J. Phys. C: Solid State Phys. 15 (1982) 4671
23. K. Sato, I. Aksenov, N. Nishikawa, T. Shinzato and H. Nakanishi: to be published in Proc. 10th Int. Conf. Ternary and Multinary Compounds, Stuttgart 1995, J. Cryst. Res. Technol.
24. R. Pappalardo and R. E. Dietz: Phys. Rev. 123 (1961) 1188.
25. E. E. Vogel, O. Mualin, M. A. de Orue and J. Rivera-Iratchet: Phys. Rev. B 44 (1991) 1579.
26. K. Sato, H. Tsunoda and T. Teranishi: Proc. 7th Int. Conf. Ternary and Multinary Compounds, Snowmass, 1986 (Mater. Res. Soc., Pittsburgh, 1987) p. 459.
27. N. Nishikawa, I. Aksenov, T. Shinzato, T. Sakamoto and K. Sato: Jpn. J. Appl. Phys. 34 (1995) L975.
28. A. Abraham and H. M. L. Pryce: Proc. R. Soc. London Ser. A 205 (1951) 135.
29. G. K. Padam, G. L. Malhotta and S. K. Gupta: Sol. Energy Mater. 22 (1991) 303.
30. L. M. Roth, B. Lax and S. Zwerdling: Phys. Rev. 114 (1959) 90.