Bonding stress and reliability of high power GaAs-based lasers

IEEE Transactions on Components and Packaging Technologies

Volumn 24, Issue 1, 2001, Pages 92-98

  Lisak, Dubravka ^b   Cassidy, Daniel T ^a,c   Moore, Alan H ^d  

^a IEEE

^b JDS UNIPHASE   (United States)

^c MCMASTER UNIVERSITY   (Canada)

^d Perkin Elmer Optoelectronics   (Canada)

Author keywords

Bonding stress; Conductive epoxies; Eutectic lead tin solder; Gallium arsenide; Laser reliability; Photoluminescence; Semiconductor stress

Indexed keywords

ADHESIVES; BONDING; COPPER; HEAT SINKS; HIGH POWER LASERS; LIGHT POLARIZATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; STRESS ANALYSIS; THERMAL CONDUCTIVITY; THERMAL EXPANSION;

DEGREE OF POLARIZATION (DOP);

SEMICONDUCTOR LASERS;

EID: 0035278838     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/6144.910807     Document Type: Article

References (24)

1. Degradation behavior of 0.98-μm strained quantum well InGaAs/AlgaAs lasers under high-power operation
2. Kinetic model for degradation of light-emitting diodes
3. Degradation of InGaAsP/InP-based multiquantum-well lasers
4. Effects of stress on threshold, wave-length, and polarization of the output of InGaAsP semiconductor diode lasers
5. Material and fabrication-related limitations to high-power operation of GaAs/AlGaAs and InGaAs/AlGaAs laser diodes
6. Materials-related reliability aspects of III-V optical devices
7. GaAs/Al-GaAs light emitters fabricated on undercut GaAs on Si
8. Imaging of stresses in GaAs diode lasers using polarization-resolved photoluminescence
9. Strain-enhanced luminescence degradation in GaAs/GaAlAs double-heterostructure lasers revealed by photoluminescence
10. Effect of metallization on crystalline perfection and level of stress in semi-insulating and n-type gallium arsenide single crystal wafers
11. Strain measurement and estimation of photoelastic effects and strain-induced optical gain change in ridge wave-guide lasers
12. Dislocation detection using polarization-resolved photoluminescence
13. Determination of stress in GaAs/Si material
14. Strain-induced degradation of GaAs injection lasers
15. Thermal expansion coefficients and lattice parameters between 10°C and 65°C in the system GaP-GaAs
16. A Comparative study of silver-epoxy and tin-lead solder in their joints with copper, through mechanical and electrical measurements during debonding