Reflection high energy electron diffraction and Auger electron spectroscopy (RHEED-AES) observation of Bi desorption from a single-domain Si(001)2×1-Bi surface

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 12 B, 1996, Pages

  Kim, Ki Seon ^a   Takakuwa, Yuji ^a   Mori, Yuji ^a   Kono, Shozo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AUGER ELECTRON SPECTROSCOPY; BISMUTH; DESORPTION; REACTION KINETICS; REFLECTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE MEASUREMENT; SURFACE PHENOMENA; SURFACE STRUCTURE; VACUUM APPLICATIONS;

REACTION ORDER; SURFACE COVERAGE; ULTRAHIGH VACUUM;

SILICON;

EID: 0030385050     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1695     Document Type: Article

References (13)