Application of the phase-retrieval X-ray diffractometry to an ultra-high spatial resolution mapping of SiGe films near the absorption edge of Ge

Physica Status Solidi (A) Applied Research

Volumn 184, Issue 1, 2001, Pages 145-155

  Nikulin, A Y ^a   Siu, K ^a   Davis, J R ^a   Zaumseil, P ^b   Souvorov, A Y ^c   Freund, A ^c  

^a MONASH UNIVERSITY   (Australia)

^b IHP   (Germany)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; SINGLE CRYSTALS; SYNCHROTRON RADIATION; X RAY DIFFRACTION ANALYSIS;

SILICON GERMANIDE; ULTRAHIGH SPATIAL RESOLUTION MAPPING;

SEMICONDUCTING FILMS;

EID: 0035277551     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200103)184:1<145::AID-PSSA145>3.0.CO;2-Y     Document Type: Article

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