An enhanced technique for the characterisation of crystal lattice strains in epitaxially grown layers from X-ray diffraction profiles

Physica Status Solidi (A) Applied Research

Volumn 158, Issue 2, 1996, Pages 523-527

  Nikulin, A Yu ^a   Zaumseil, P ^b  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

STRAIN PROFILES;

EPITAXIAL GROWTH; GERMANIUM ALLOYS; LEAST SQUARES APPROXIMATIONS; SILICON ALLOYS; STRAIN; X RAY DIFFRACTION ANALYSIS;

CRYSTAL LATTICES;

EID: 0030395677     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211580219     Document Type: Article

References (7)

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