Oxidation behavior of a patterned TiSi2/polysilicon stack

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 2, 2001, Pages 366-371

  Kim, Tae Kyun ^a   Jang, Se Aug ^a   Yeo, In Seok ^a   Yang, Jun Mo ^a   Park, Tae Su ^a   Park, Jin Won ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDATION; SEMICONDUCTOR DOPING; SILICA; SILICON WAFERS; TEMPERATURE; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY;

NITRIDE SPACER; POLYSILICON GATE STACK; REOXIDATION;

ELECTRODES;

EID: 0035273349     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1356065     Document Type: Article

References (8)

1. S. Wolf, Silicon Processing for the VLSI Era (Lattice, Sunset Beach, CA, 1995), Vol. 3, p. 227.
2. H. Jiang, C. S. Petersson, and M. A. Nicolet, Thin Solid Films 140, 115 (1982).
3. F. M. d'Heurle, A. Cros, R. D. Frampton, and E. A. Irene, Philos. Mag. B 55, 291 (1987).
4. J. R. Chen, M. P. Houng, S. K. Hsiung, and Y. C. Liu, Appl. Phys. Lett. 37, 824 (1980).
5. F. M. d'Heurle, E. A. Irene, and C. Y. Ting, Appl. Phys. Lett. 42, 361 (1983).
6. Y. Mashiko, A. Ohsaki, T. Okamoto, K. Fukumoto, and H. Koyama, Jpn. J. Appl. Phys., Part 1 35, 584 (1996).
7. H. S. Kim, S. D. Lee, K. H. Lee, J. Y. Lee, I. S. Yeo, and S. K. Lee, in 1998 International Conference on Ion Implantation Technology Proceedings, edited by J. Matsuo, G. Takaoka, and I. Yamada (IEEE, New York, 1999), p. 59.
8. Y. S. Suh, D. G. Park, S. A. Jang, S. H. Lee, T. K. Kim, I. S. Yeo, S. D. Kim, and C. T. Kim, J. Appl. Phys. 87, 2760 (2000).