Suppression of abnormal oxidation of WSix/P-doped Si stack gate electrode during gate re-oxidation by additional nitrogen ion implantation

Proceedings of the International Conference on Ion Implantation Technology

Volumn 1, Issue , 1999, Pages 59-62

  Kim, Hyeon Soo ^a   Lee, Sang Do ^a   Lee, Jeong Youb ^a   Lee, Sang Moo ^a   Lee, Kil Ho ^a   Yeo, In Seok ^a   Lee, Sahng Kyoo ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; GATES (TRANSISTOR); ION IMPLANTATION; NITROGEN; OXIDATION; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

GATE OXIDE INTEGRITY (GOI);

ELECTRODES;

EID: 0033335814     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)