Formation mechanisms of the deformed oxide layer in a tungsten polycide structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 PART A, 1996, Pages 584-588

  Mashiko, Yoji ^a   Ohsaki, Akihiko ^a   Okamoto, Tatsuo ^a   Fukumoto, Koji ^a   Koyama, Hirosi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Oxidation; Polycide structure; Tungsten oxide; Tungsten suicide; X ray photoelectron spectroscopy

Indexed keywords

ION IMPLANTATION; MORPHOLOGY; OXIDATION; OXIDES; SEMICONDUCTING FILMS; SILICA; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURE; CRYSTALLIZED SILICON FILMS; POLYCIDE STRUCTURE; POLYSILICON DEPOSITION; TUNGSTEN OXIDE; TUNGSTEN POLYCIDE STRUCTURE; TUNGSTEN SILICIDE;

SEMICONDUCTING SILICON;

EID: 0030082261     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.584     Document Type: Article

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