Optical and structural properties of SiC layers grown by an electron cyclotron resonance CVD technique

Diamond and Related Materials

Volumn 10, Issue 3-7, 2001, Pages 1264-1267

  Giorgis, F ^a   Chiodoni, A ^a   Cicero, G ^a   Ferrero, S ^a   Mandracci, P ^a   Barucca, G ^b   Reitano, R ^c   Musumeci, P ^c  

^a POLITECNICO DI TORINO   (Italy)

^b 60131   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

Author keywords

3C SiC Si; Micro Raman spectroscopy; Photo luminescence; X ray diffraction (XRD)

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SILICON COMPOUNDS; SILICON WAFERS; STOICHIOMETRY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

MICROCRYSTALLINE;

THIN FILMS;

SILICON CARBIDE;

EID: 0035270409     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00528-8     Document Type: Article

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