Formation of stable Si network at low Ts by controlling chemical reaction at growing surface

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 127-136

  Shimizu, I ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; FILM PREPARATION; POLYCRYSTALLINE MATERIALS; REACTION KINETICS; SILICON SOLAR CELLS; THIN FILM DEVICES;

HYDROGEN DILUTION; LIGHT SOAKING;

AMORPHOUS SILICON;

EID: 0035254408     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00165-3     Document Type: Article

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