High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 637-644

  Agert, C ^a   Dimroth, F ^a   Schubert, U ^a   Bett, A W ^a   Leu, S ^b   Stolz, W ^b  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

TERTIARYBUTYLARSINE;

SOLAR CELLS;

EID: 0035254392     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00252-X     Document Type: Article

References (5)

1. Leu S., Höhnsdorf F., Stolz W., Becker R., Salzmann A., Greiling A. J. Crystal Growth. 195:1998;98.
2. Leu S., Protzmann H., Höhnsdorf F., Stolz W., Steinkirchner J., Hufgard E. J. Crystal Growth. 195:1998;91.
3. S. Leu, W. Stolz, A. Salzmann, A. Greiling, unpublished.
4. Kakinuma H., Mohri M., Akiyama M. Jpn. J. Appl. Phys. 36:1997;23.
5. P. Velling, M. Agethen, E. Herenda, W. Prost, W. Stolz, F.-J. Tegude, LP-MOVPE growth of carbon-doped (GaIn)P/GaAs HBT using an all-liquid source configuration, in: Proceedings of the 26th International Symposium Compound Semiconductors, Berlin, 1999, Institute of Physics Conference Series, to be published.