Preparation of gallium nitride (GaN) and related compounds by plasma immersion ion implantation and rapid thermal annealing

Surface and Coatings Technology

Volumn 136, Issue 1-3, 2001, Pages 142-145

  Ho, Aaron H P ^a   Kwok, Dixon T K ^a   Zeng, X C ^a   Chan, Chung ^b   Chu, Paul K ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b NORTHEASTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL LATTICES; ELECTRIC POTENTIAL; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PLASMA SOURCES; RAPID THERMAL ANNEALING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SYNTHESIS (CHEMICAL);

GALLIUM NITRIDE; LATTICE MATCHING; PLASMA IMMERSION ION IMPLANTATION (PIII);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035253895     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(00)01044-6     Document Type: Article

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