High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si. Part II: Sputtering yield transients, the approach to high-fluence equilibrium

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 159, Issue 3, 1999, Pages 133-141

  Zhang, Yanwen ^a   Winzell, Thomas ^a   Zhang, Tonghe ^b   Maximov, Ivan A ^a   Sarwe, Eva Lena ^a   Graczyk, Mariusz ^a   Montelius, Lars ^a   Whitlow, Harry J ^a  

^a LUND INSTITUTE OF TECHNOLOGY   (Sweden)

^b BEIJING NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; ION BOMBARDMENT; SILICA; SILICON; SILICON NITRIDE; SPUTTERING; TRANSIENTS; VACUUM APPLICATIONS;

METAL VAPOR VACUUM ARC (MEVVA) IRRADIATION;

ION IMPLANTATION;

EID: 0033339489     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00538-8     Document Type: Article

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