Foreign atom incorporation during metal siilcide formation by ion beam synthesis

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 135, Issue 1-4, 1998, Pages 392-396

  Zhang, Yanwen ^a   Whitlow, Harry J ^a   Zhang, Tonghe ^b  

^a LUND INSTITUTE OF TECHNOLOGY   (Sweden)

^b BEIJING NORMAL UNIVERSITY   (China)

Author keywords

Ion beam synthesis; Recoil spectrometry; Rest gas atoms; Sputtering; Suicides

Indexed keywords

CARBON; COBALT; ION BEAMS; ION IMPLANTATION; ION SOURCES; OXYGEN; SPUTTERING; STOICHIOMETRY; SYNTHESIS (CHEMICAL); VANADIUM;

ENERGY DISPERSIVE ELASTIC RECOIL DETECTION ANALYSIS; ION BEAM SYNTHESIS;

SILICON WAFERS;

EID: 0032472683     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00616-2     Document Type: Article

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