Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SiC by hydride vapor phase epitaxy

Solid-State Electronics

Volumn 45, Issue 2, 2001, Pages 249-253

  Polyakov, A Y ^a   Govorkov, A V ^a   Smirnov, N B ^a   Nikolaev, A E ^b   Nikitina, I P ^b   Dmitriev, V A ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c Technol and Devices Intl Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CATHODOLUMINESCENCE; ELECTRIC CONDUCTIVITY MEASUREMENT; ENERGY GAP; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TEMPERATURE MEASUREMENT; VAPOR PHASE EPITAXY; ZINC;

DEEP CENTERS; GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY; MICROCATHODOLUMINESCENCE;

SEMICONDUCTING FILMS;

EID: 0035246824     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00256-2     Document Type: Article

References (12)

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