Scanning electron microscope studies of GaN films grown by hydride vapor phase epitaxy

Solid-State Electronics

Volumn 43, Issue 10, 1999, Pages 1937-1943

  Polyakov, A Y ^a   Govorkov, A V ^a   Smirnov, N B ^a   Mil'Vidskii, M G ^a   Tsvetkov, D V ^b   Stepanov, S I ^b   Nikolaev, A E ^b   Dmitriev, V A ^b  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DEPOSITION; ELECTRON BEAMS; INTERFACES (MATERIALS); MORPHOLOGY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY (HVPE); MICROCATHODOLUMINESCENCE (MCL);

SEMICONDUCTING FILMS;

EID: 0033337097     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00152-5     Document Type: Article

References (15)

1. Detchprohm T., Hiramatsu K., Sawaki N., Akasaki I. J. Cryst. Growth. 137:1994;170.
2. Lester S.D., Ponce F.A., Craford M.G., Steigerwald D.A. Appl. Phys. Lett. 66:1995;1249.
3. Gotz W., Romano L.T., Krusor B.S., Johnson N.M. Appl. Phys. Lett. 69:1996;242.
4. Gotz W., Walker J., Romano L.T., Johnson N.M., Molnar R.J. Mater. Res. Soc. Symp. Proc. 449:1997;525.
5. Melnik YuV, Nikitina IP, Zubrilov AS, Babanin AI, Tretyakov VV Dmitriev VA. In: Proceedings of the 2nd Int. Conf. on Nitride Semiconductors, Tokushima, 1997:254.
6. Nikolaev AE, Melnik YuV, Kuznetsov NI, Strelchuk AM, Kovarskyi AP, Vasilevsky KV, Dmitriev VA. Mat Res Soc Symp Proc 1998;482:251.
7. Pariland O, Wagner V, Buehlman NJ, Ilegems M. Mater Res Soc Internet J (Nitride Semiconductors Research) 1998;3(article 40).
8. Melnik Yu.V., Nikitina I.P., Zubrilov A.S., Sitnikova A.A., Musikhin Yu.G., Dmitriev V.A. Inst. Phys. Conf. Ser. 142:1996;863.
9. Polyakov AY Structural and electronic properties of AlGaN. In: Pearton SJ, editor. GaN and related materials II. New York: Gordon and Breach, 1999:173-233.
10. Polyakov AY, Smirnov NB, Govorkov AV, Greve DW, Skowronski M, Shin M, Redwing JM. Mater Res Soc Internet J (Nitride Semiconductors Research) 1998;3(article 37).
11. Polyakov A.Y., Govorkov A.V., Smirnov N.B., Mil'vidskii M.G., Redwing J.M., Shin M., Skowronski M., Greve D.W. Solid State Electron. 42:1998;637.
12. Kuiken H.K., van Opdorp C. J. Appl. Phys. 57:1985;2077.
13. Singh R., Molnar R.J., Unlu M.S., Moustakas T.D. Appl. Phys. Lett. 64:1994;336.
14. Bremser MD, Perry WG, Zheleva T, Edwards NV, Nam OH, Parikh N, Aspnes DE, Davis RF. Mater Res Soc Internet J (Nitride Semiconductors Research) 1996;1(article 8).
15. Ponce F.A., Bour D.P., Gotz W., Wright P.J. Appl. Phys. Lett. 68:1996;57.