Role of ion bombardment and plasma impedance on the performances presented by undoped a-Si:H films

Thin Solid Films

Volumn 383, Issue 1-2, 2001, Pages 165-168

  Martins, R ^a   �?�?guas, H ^a   Ferreira, I ^a   Silva, V ^a   Cabrita, A ^a   Fortunato, E ^a  

^a UNINOVA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ION BOMBARDMENT; NANOSTRUCTURED MATERIALS; PHOTOSENSITIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

PLASMA IMPEDANCE;

AMORPHOUS FILMS;

EID: 0035246781     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01597-2     Document Type: Article

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