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Volumn 56, Issue 1, 2000, Pages 25-30
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Role of the gas temperature and power to gas flow ratio on powder and voids formation in films grown by PECVD technique
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Author keywords
Amporhous silicon; Plasma; Plasma deposition; Plasma impedance; Silane plasmas
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Indexed keywords
AMORPHOUS FILMS;
AMORPHOUS SILICON;
ELECTRIC IMPEDANCE;
ELECTRONIC DENSITY OF STATES;
FILM GROWTH;
PHOTOSENSITIVITY;
SILANES;
THERMAL EFFECTS;
URBACH ENERGY;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
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EID: 0033886444
PISSN: 0042207X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0042-207X(99)00158-X Document Type: Article |
Times cited : (20)
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References (12)
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