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Volumn 56, Issue 1, 2000, Pages 25-30

Role of the gas temperature and power to gas flow ratio on powder and voids formation in films grown by PECVD technique

Author keywords

Amporhous silicon; Plasma; Plasma deposition; Plasma impedance; Silane plasmas

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ELECTRIC IMPEDANCE; ELECTRONIC DENSITY OF STATES; FILM GROWTH; PHOTOSENSITIVITY; SILANES; THERMAL EFFECTS;

EID: 0033886444     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(99)00158-X     Document Type: Article
Times cited : (20)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.