A simple ohmic-contact formation technology using phosphine plasma treatment for top-gate amorphous-silicon thin-film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 6 A, 1998, Pages 3226-3231

  Ugai, Yasuhiro ^a   Yukawa, Teizo ^a   Amano, Kazuaki ^a   Aoki, Shigeo ^a  

^a Hosiden and Philips Display Corp   (Japan)

Author keywords

Amorphous silicon; Doping; Indium tin oxide; Ohmic contact; Plasma enhanced chemical vapor deposition; Thin film transistors

Indexed keywords

EID: 0342411697     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.3226     Document Type: Article

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