Ferroelectric thin films prepared by backside pulsed ion-beam evaporation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 B, 2001, Pages 1049-1051

  Sonegawa, Tomihiro ^a   Arakaki, Toshiki ^a   Maehama, Takehiro ^a   Jiang, Weihua ^b   Yatsui, Kiyoshi ^b  

^a UNIVERSITY OF THE RYUKYUS   (Japan)

^b NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Ferroelectric film; Ion beam evaporation; Pb(Zr, Ti)O3; PbTiO3

Indexed keywords

CURRENT DENSITY; EVAPORATION; FERROELECTRIC MATERIALS; FILM PREPARATION; GLASS CERAMICS; ION BEAM ASSISTED DEPOSITION; PERMITTIVITY;

BACKSIDE PULSED ION-BEAM EVAPORATION; ION BEAM PARAMETERS;

FERROELECTRIC THIN FILMS;

EID: 0035246053     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1049     Document Type: Article

References (19)