Photoluminescence studies of Czochralski grown silicon pressure - annealed at ≤ 1000K

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3724, Issue , 1999, Pages 239-243

  Misiuk, Andrzej ^a   Surma, Hancza B ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CHEMICAL LASERS; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ELECTRIC PROPERTIES; HELIUM; HYDROGEN; HYDROSTATIC PRESSURE; OXYGEN; PHOTOLUMINESCENCE; PLASMA ETCHING;

ARGON LASER; CZOCHRALSKI GROWN SILICON; OXYGEN CONCENTRATION; THERMAL DONORS;

SILICON;

EID: 0032640442     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.342997     Document Type: Conference Paper

References (8)