Comparative study of rapid and classical thermal phosphorus diffusion on polycrystalline silicon thin films

Solar Energy Materials and Solar Cells

Volumn 65, Issue 1, 2001, Pages 487-493

  Bourdais, S ^a   Beaucarne, G ^b   Slaoui, A ^a   Poortmans, J ^b   Semmache, B ^c   Dubois, C ^c  

^a CNRS   (France)

^b IMEC   (Belgium)

^c INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GRAIN SIZE AND SHAPE; PHOSPHORUS; PHOTOVOLTAIC EFFECTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL DIFFUSION;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; PHOSPHORUS DOPING; POLYCRYSTALLINE SILICON; RAPID THERMAL DIFFUSION; SPIN ON DOPING;

SILICON SOLAR CELLS;

EID: 0035202647     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00131-8     Document Type: Article

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