SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 650, Issue , 2001, Pages

Ion-implantation generated nanovoids in Si and MgO monitored by high resolution positron beam analysis

(7) Eijt, S W H a Falub, C V a Van Veen, A a Schut, H a Mijnarends, P E a Van Huis, M A a Fedorov, A V a

a DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; HELIUM; ION IMPLANTATION; MAGNESIA; NONDESTRUCTIVE EXAMINATION; PARTICLE BEAMS; POSITRONS; SEMICONDUCTING SILICON; CRYSTAL DEFECTS; ELECTRON BEAMS; SILICON;

ANNIHILATION; HIGH RESOLUTION POSITRON BEAM ANALYSIS; NANOVOIDS; POSITRONIUM;

CRYSTAL DEFECTS; ION IMPLANTATION;

EID: 0035173684 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (5)

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