Annealing behaviour of defects in helium implanted MgO

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 212-215

  Schut, H ^a   Van Veen, A ^a   Labohm, F ^a   Fedorov, A V ^a   Neeft, E A C ^b   Konings, R J M ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b TNO   (Netherlands)

Author keywords

Ceramic; Helium; Ion implantation; Oxides; Positron

Indexed keywords

ANNEALING; ATOMS; CRYSTAL DEFECTS; DOSIMETRY; HELIUM; LIGHT ABSORPTION; MAGNESIA; SINGLE CRYSTALS;

NEUTRON DEPTH PROFILING; POSITRON BEAM DOPPLER BROADENING; VACANCY;

ION IMPLANTATION;

EID: 0032757258     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00532-1     Document Type: Article

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