Growth and electrical properties of new semiconductor compound ZnCdHgTe

Crystal Research and Technology

Volumn 36, Issue 8-10, 2001, Pages 1027-1034

  Khlyap, G ^a   Sydorchuk, P ^a  

^a DROHOBYCH IVAN FRANKO STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

Author keywords

Band gap fluctuations; Current voltage characteristics; Heterostructure; ZnCdHgTe

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; LIQUID PHASE EPITAXY; SINGLE CRYSTALS; SUBSTRATES;

BAND-GAP FLUCTUATIONS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0035166431     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200110)36:8/10<1027::AID-CRAT1027>3.0.CO;2-C     Document Type: Conference Paper

References (12)

1. ANDRUKHIV, A.M., LITVAK, A.M., MIRONOV, K.E.: J. Tech. Phys. Lett. (Russia) 18 (1992) 47
2. ANDRUKHIV, A., KHLYAP, G., ANDRUKHIV, M.: J. Cryst. Growth 198/199 (1999) 1162
3. HERNANDEZ, E : Cryst. Res. Technol. 33 (1998) 285
4. KHLYAP, G.: Unpublished work (2000)
5. PETROSIAN, S., SHIK, A.: Semiconductors (Russia) 17 (1983) 1575
6. RAIKH, M., RUZIN, I., SHKLOVSKI, B.: Semiconductors (Russia) 22 (1988) 1979
7. SHER, A., SHEN A.-B., SPICER W.E., SHIH G.-K.: J. Vac. Sci. Technol. A3 (1985) 105
8. SYDORCHUK, P., KHLYAP, G., ANDRUKHIV, A.: Cryst. Res. Technol. 36 (2001) 361
9. nd Ed. - A Wiley-Interscience publication, John Wiley & Sons, New York, 1981
10. UNLU, H., NUSSBAUM, A.: Phys. Stat. Sol. (a) 94 687 (1986)
11. VUL', A., KIDALOV, S.: Semiconductors (Russia) 20 (1986) 451
12. ZUDKOV, V.: Semiconductors (Russia) 32 (1998) 61