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Volumn 36, Issue 4-5, 2001, Pages 361-369

Growth and some properties of heterostructures based on new narrow-gap semiconductor ZnCdHgTe

(3) Sydorchuk, P a,c Khlyap, G a,c Andrukhiv, A b

a State Pedagogical University "Pereyaslav Khmelnytsky State Pedagogical University named after Gregory Skovoroda" (Ukraine)

b Komatsu Silicon America Inc (United States)

c DROHOBYCH IVAN FRANKO STATE PEDAGOGICAL UNIVERSITY (Ukraine)

Author keywords

Barrier structure; Energy band diagram; Liquid phase epitaxy; Solid solution; Tellurides; ZnCdHgTe

Indexed keywords

TELLURIDES;

CHEMICAL BONDS; CRYSTAL LATTICES; CRYSTALLIZATION; ENERGY GAP; FILM GROWTH; HETEROJUNCTIONS; ISOTHERMS; LIQUID PHASE EPITAXY; PHASE DIAGRAMS; SEMICONDUCTOR MATERIALS;

SOLID SOLUTIONS;

EID: 0034940343 PISSN: 02321300 EISSN: None Source Type: Journal
DOI: 10.1002/1521-4079(200106)36:4/5<361::AID-CRAT361>3.0.CO;2-5 Document Type: Article

Times cited : (17)

References (12)

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