Some properties of heterostructures based on new semiconductor ZnCdHgTe

Journal of Crystal Growth

Volumn 198-199, Issue pt 2, 1999, Pages 1162-1164

  Andrukhiv, A ^a   Khlyap, G ^a   Andrukhiv, M ^a  

^a DROHOBYCH IVAN FRANKO STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; ENERGY GAP; EPITAXIAL GROWTH; HETEROJUNCTIONS; LIQUID PHASE EPITAXY; STRUCTURE (COMPOSITION);

CARRIER TRANSPORT; CARRIER TUNNELING; CHANNEL ISLAND STRUCTURE; HALL MEASUREMENT; ZINC CADMIUM MERCURY TELLUNIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033514557     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01053-7     Document Type: Article

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3. A. Zemel, A. Sher, D. Eger, J. Appl. Phys. 62 (1987) 1861.
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5. A.Ya. Vul, S.V. Kidalov, Semiconductor Phys. Technol. 20 (1986) 451 (in Russian).