Space-charge-limited current effects in p-type CuIn0.8Ga0.2Se2/In schottky diodes

Crystal Research and Technology

Volumn 33, Issue 2, 1998, Pages 285-289

  Hernandez E ^a  

^a FACULTAD DE CIENCIAS VETERINARIAS   (Venezuela)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SINGLE CRYSTALS;

CHILD-LANGMUIR LAW; IDEALITY FACTOR; SPACE-CHARGE-LIMITED CURRENT EFFECTS;

SCHOTTKY BARRIER DIODES;

EID: 0032290248     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-4079(1998)33:2<285::aid-crat285>3.0.co;2-s     Document Type: Article

References (7)

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