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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 173, Issue 3, 2001, Pages 319-325

Defect structure of erbium-doped 〈1 1 1〉 silicon layers formed by solid phase epitaxy

(4) Kyutt, R N a Sobolev, Nikolai A a Nikolaev, Yu A a Vdovin, V I b

a IOFFE INSTITUTE (Russian Federation)

b Inst Chem Prob of Microlectron (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ERBIUM; ION IMPLANTATION; SEMICONDUCTOR DOPING; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; TWINNING; X RAY CRYSTALLOGRAPHY;

SOLID PHASE EPITAXY (SPE);

SEMICONDUCTING FILMS;

EID: 0035157206 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(00)00403-1 Document Type: Article

Times cited : (9)

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