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Volumn 39, Issue 5, 1997, Pages 759-762

X-ray diffraction studies of silicon implanted with high-energy erbium ions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0031489151     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1129963     Document Type: Article
Times cited : (7)

References (17)
  • 2
    • 21844493990 scopus 로고
    • N. A. Sobolev, Fiz. Tekh. Poluprovodn. 29, 1153 (1995) [Semiconductors 29, 595 (1995)].
    • (1995) Semiconductors , vol.29 , pp. 595
  • 6
    • 0039643994 scopus 로고
    • edited by L. F. J. Heinrich et al. Plenum Press, New York
    • E. H. te Kaat and G. H. Schwuttke, Advances in X-Ray Analysis, edited by L. F. J. Heinrich et al. (Plenum Press, New York, 1972), Vol. 15.
    • (1972) Advances in X-ray Analysis , vol.15
    • Te Kaat, E.H.1    Schwuttke, G.H.2
  • 11
    • 0040830329 scopus 로고
    • V. A. Bushuev and A. P. Petrakov, Kristallografiya 40, 11 (1995) [Crystallogr. Rep. 40 (1995)].
    • (1995) Crystallogr. Rep. , vol.40
  • 16
    • 0019070851 scopus 로고
    • O. V. Aleksandrov, R. N. Kyutt, and T. G. Alksnis, Fiz. Tverd. Tela 22, 2892 (1980) [Sov. Phys. Solid State 22, 1688 (1980)].
    • (1980) Sov. Phys. Solid State , vol.22 , pp. 1688


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.