Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy

Solid State Communications

Volumn 117, Issue 7, 2001, Pages 445-448

  Taliercio, T ^a   Gallart, M ^a   Lefebvre, P ^a   Morel, A ^a   Gil, B ^a   Allegre J ^a   Grandjean, N ^b   Massies, J ^b   Grzegory, I ^c   Porowski, S ^c  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CRHEA CNRS   (France)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; EXCITONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

TIME RESOLVED OPTICAL SPECTROSCOPY;

SEMICONDUCTOR GROWTH;

EID: 0035157145     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00475-0     Document Type: Article

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