Anomalous interface shapes in the seed well during vertical gradient freeze growth of Si-doped GaAs

Journal of Crystal Growth

Volumn 222, Issue 1-2, 2001, Pages 88-95

  Rasp, M ^a   Birkmann, B ^a   Muller G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; INFRARED SPECTROSCOPY; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); ISOTHERMS; PRECIPITATION (CHEMICAL); SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SOLIDIFICATION;

FACETED GROWTH; PHASE BOUNDARY; VERTICAL GRADIENT FREEZE METHOD;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035151925     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00924-6     Document Type: Article

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