Development of PZT sputtering method for mass-production

Applied Surface Science

Volumn 169-170, Issue , 2001, Pages 539-543

  Masuda, T ^a   Miyaguchi, Y ^a   Tanimura, M ^a   Nishioka, Y ^a   Suu, K ^a   Tani, N ^a  

^a ULVAC INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC MATERIALS; LEAD COMPOUNDS; MAGNETRON SPUTTERING; RANDOM ACCESS STORAGE; SPUTTER DEPOSITION; SUBSTRATES; THIN FILMS;

NONVOLATILE FERROELECTRIC RANDOM ACCESS MEMORIES;

DIELECTRIC FILMS;

EID: 0035127156     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00716-9     Document Type: Article

References (6)

1. Suu K., Osawa A., Nishioka Y., Tani N. Jpn. J. Appl. Phys. 36:1997;5789.
2. Suu K., Osawa A., Tani N., Ishikawa M., Nakamura K., Ozawa T., Sameshima K., Kamisawa A., Takasu H. Integr. Ferroelectr. 14:1997;59.
3. K. Suu, IEICE Technical Report, 1999, p. 21.
4. Suu K., Masuda T., Nishioka Y., Tani N. Integr. Ferroelectr. 21:1998;407.
5. Shin D.S., Lee H.N., Lee C.W., Kim Y.T., Choi I.H. Jpn. J. Appl. Phys. 37:1998;5189.
6. Suu K., Osawa A., Tani N., Ishikawa M., Nakamura K., Ozawa T., Sameshima K., Kamisawa A., Takasu H. Jpn. J. Appl. Phys. 35:1996;4967.