Preparation of SrBi2Ta2O9 ferroelectric thin film by RF magnetron sputtering

Integrated Ferroelectrics

Volumn 21, Issue 1-4, 1998, Pages 407-418

  Suu, Koukou ^a   Masuda, Takeshi ^a   Nishioka, Yutaka ^a   Tani, Noriaki ^a  

^a ULVAC INC   (Japan)

Author keywords

Compositional control; Ferroelectric RAM; Ferroelectric thin film; rf sputtering; SrBi2Ta2O9

Indexed keywords

DIELECTRIC PROPERTIES OF SOLIDS; FILM PREPARATION; MAGNETRON SPUTTERING; RANDOM ACCESS STORAGE; SPUTTER DEPOSITION; STRONTIUM COMPOUNDS; THIN FILMS;

COMPOSITIONAL CONTROL; FERROELECTRIC THIN FILMS;

DIELECTRIC FILMS;

EID: 0032312433     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589808202081     Document Type: Article

References (9)

1. K.Suu, A.Osawa, N.Tani, M.Ishikawa, K.Nakamura, T.Ozawa, K.Sameshima, A.Kamisawa and H.Takasu: Integrated Ferroelectrics, 14, 59 (1997)
2. K.Suu, A.Osawa, N.Tani, M.Ishikawa, K.Nakamura, T.Ozawa, K.Sameshima, A.Kamisawa and H.Takasu: Jpn. J. Appl. Phy., 35, 4967 (1996).
3. K.Suu, A.Osawa, Y.Nishioka and N.Tani: Jpn. J. Appl. Phy., 36, 5789 (1997).
4. T.Mihara, H.Watanabe, C.A.Paz de Araujo, J.Cuchiaro, M.Scott, L.D.McMillan, Proc. 4thInt. Symp, Integr. Ferroelectr. Moterey, CA.P.137 (1992)
5. T.Atsuki, N.Soyama, T.Yonezawa and K.Ogi: Jpn. J. Appl. Phy., 34, 5096 (1995).
6. T.Noguchi, T.Hase and Y.Miyasaka: Jpn. J. Appl. Phy., 35, 4900 (1996).
7. T.Li, Y.Zhu, S.B.Desu, C.H.Perg, M.Nagata: Appl. Phys. Lett., 68 (5), 616 (1996)
8. T.K.Song, J.K.Lee and H.J.Jung: Appl. Phys. Lett., 69 (25), 616 (1996)
9. D.Thomas, A.I.Kingon, O.Auciello, R.Waser and M.Schumacher, Integrated Ferroelectric 14, 51(1996)