AFM study of in situ etching of 4H and 6H SiC substrates

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 363-366

  Karlsson, S ^a   Nordell, N ^a  

^a ACREO AB   (Sweden)

Author keywords

AFM; Epitaxy; Etching; Surface Preparation; Surface Roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; ETCHING; SILICON CARBIDE; SUBSTRATES; SURFACE ROUGHNESS;

SURFACE PREPARATION;

SILICON WAFERS;

EID: 3743071522     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.363     Document Type: Article

References (4)

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2. A.A. Burk Jr, L.B. Rowland, J. Crystal Growth 167 (1996), p.586.
3. N. Nordell, A. Schöner and S.G. Andersson, J. Electrochem. Soc. 143 (1996), p.2910.
4. N. Nordell, A. Schöner and M.K. Linnarsson, J. Electronic Materials, 26 (1997), p. 187.