A read-disturb-free ferroelectric gate FET memory

Integrated Ferroelectrics

Volumn 34, Issue 1-4, 2001, Pages 27-36

  Shimada, Y ^a   Arita, K ^a   Kato, Y ^a   Uchiyama, K ^a   Joshi, V ^a   Lim, M ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

FeFET; Ferroelectric memory; FET; SrBi2(Ta,Nb)2O9

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FERROELECTRIC MATERIALS; GATES (TRANSISTOR);

FERROELECTRIC FIELD EFFECT TRANSISTOR; FERROELECTRIC MEMORY; READ BIASING VOLTAGE;

FERROELECTRIC DEVICES;

EID: 0035027036     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584580108012871     Document Type: Conference Paper

References (8)