SBT-based ferroelectric FET for nonvolatile non-destructive read out (NDRO) memory applications

Integrated Ferroelectrics

Volumn 27, Issue 1, 1999, Pages 71-80

  Lim, M ^a   Bacon, J W ^a   McMillan, L D ^a   Paz De Araujo, C A ^a  

^a Symetrix Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM COMPOUNDS; DECOMPOSITION; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; HYSTERESIS; NONDESTRUCTIVE READOUT; NONVOLATILE STORAGE; POLARIZATION; SEMICONDUCTING SILICON; SUBSTRATES;

METAL FERROELECTRIC INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR; METAL ORGANIC DECOMPOSITION; STRONTIUM BISMUTH TITANATE;

STRONTIUM COMPOUNDS;

EID: 0033311603     PISSN: 10584587     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1080/10584589908228457     Document Type: Article

References (9)

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