The investigation of charge transport properties of SOI semiconductor devices using a heavy ion microbeam

Solid State Phenomena

Volumn 78-79, Issue , 2001, Pages 395-400

  Hirao, T ^a   Laird, J S ^a   Mori, H ^a   Onoda, S ^a   Itoh, H ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Collected charge; Heavy ion microbeam; Ion induced transient current; Silicon on insulator; Single event upset; Single event

Indexed keywords

CHARGE TRANSFER; HEAVY IONS; TRANSIENTS; TRANSPORT PROPERTIES; ULTRAFAST PHENOMENA;

COLLECTED CHARGE; HEAVY ION MICROBEAM; ION INDUCED TRANSIENT CURRENT; SILICON ON INSULATOR SEMI CONDUCTOR DEVICES; SINGLE EVENT UPSET; ULTRAFAST TRANSIENT RESPONSE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035015318     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.78-79.395     Document Type: Conference Paper

References (20)

1. Minimum size and maximum packing density of no redundant semiconductor devices
2. Satellite anomalies from galactic cosmic rays
3. Numerical studies of charge collection and funneling in silicon device
4. Device simulation of charge collection and single-event upset
5. Verification of three-dimensional charge transport simulations using ion microbeams
6. An approach to measure ultra-fast funneling current transients
7. Transient measurements of ultra-fast charge collection in semiconductor diodes
8. Alpha-, boron-, silicon- and iron-ion induced current transients in low-capacitance silicon and GaAs diodes
9. Single-event current transients induced by high energy ion microbeams
10. Effect of ion position on single-event transient current
11. A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices
12. Charge funneling in N-and P-type substrates
13. Characteristics of microstrip transmission lines
14. The development of a new data collection system and chamber for microbeam and laser investigation of charge transport as function of temperature
15. Microbeam system for study of single event upset of semiconductor devices
16. Effects of ion damage on IBICC and SEU imaging
17. Effect of micro-beam induced damage on single-event current measurements
18. Papers on carrier drift velocity in silicon at high electric field strengths
19. Bandgap dependence and related features of radiation ionization energies in semiconductors