The quantitative assessment of stress-induced voiding in process qualification

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2001, Pages 334-340

  Fischer, A H ^a   Zitzelsberger, A E ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Activation energy; Electromigration; Failure distributions; Lifetime extrapolation; Model for median time to failure; Reliability; Stress induced voiding

Indexed keywords

ALUMINUM; CURRENT DENSITY; ELASTIC MODULI; ELECTROMIGRATION; MATHEMATICAL MODELS; RELIABILITY; SILICA; STRESS RELAXATION; TENSILE STRESS; THERMAL EXPANSION; THERMAL STRESS; ULSI CIRCUITS;

COEFFICIENT OF THERMAL THERMAL EXPANSION; COEFFICIENT-INDUCED STRESS; LIFETIME EXTRAPOLATION; STRESS-INDUCED VOIDING; SUBMICRON ALUMINUM INTERCONNECTS;

INTEGRATED CIRCUIT TESTING;

EID: 0035005319     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

1. Electromigration and stress-induced voiding in fine Al and Al alloy thin films lines
2. Stress-induced void formation in metallization for integrated circuits
3. Modelling stress-induced void growth in Al-4wt%Cu lines
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5. Electromigration mass transport phenomena in Al thin-film conductors with bamboo microstructure
6. An x-ray method for direct determination of the strain state and strain relaxation in micron-scacle passivated metallization lines during thermal cycling
7. Diffusion creep of a thin foil
8. Constant temperature aging to characterize aluminum interconnect metallization for stress-induced voiding
9. A model for stress-induced metal notching and voiding in VLSI Al-Si(1%) metallization
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11. The use of an anneal after metal etch to eliminate stress-induced voiding in the 0.25μm process technology for integrated circuits
12. Stress relaxation in Al-Cu thin films
13. Electromigration and mechanical stress
14. Standard method for measuring and using the temperature coefficient of resistance to determine the temperature of a metallization line