Time-of-flight analysis of positron-annihilation induced Auger-electrons and re-emitted positrons

Materials Science Forum

Volumn 363-365, Issue , 2001, Pages 542-546

  Ohdaira, Toshiyuki ^a   Suzuki, Ryoichi ^a   Mikado, Tomohisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Oxidation; PAES; Re emission; Si; SiC; Slow positron beam; Surface; TOF

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; CHEMICAL REACTIONS; COMPOSITION; ELECTRONS; POSITRONS; SILICON; SILICON CARBIDE; SURFACE PHENOMENA; SURFACE TREATMENT;

AUGER LINESHAPE ANALYSIS; POSITRON BEAMS; POSITRON RE-EMISSION SPECTROSCOPY;

POSITRON ANNIHILATION SPECTROSCOPY;

EID: 0035000272     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.363-365.542     Document Type: Conference Paper

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