Time-of-flight positron-annihilation induced Auger electron spectroscopy studies of adsorption of oxygen on Si(100)

Applied Surface Science

Volumn 149, Issue 1, 1999, Pages 260-263

  Ohdaira, Toshiyuki ^a   Suzuki, Ryoichi ^a   Mikado, Tomohisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; GAS ADSORPTION; OXIDATION; OXYGEN; POSITRONS; THERMAL EFFECTS;

POSITRON ANNIHILATION; POSITRON SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0032678928     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00212-3     Document Type: Article

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