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Crystal Research and Technology

Volumn 32, Issue 8, 1997, Pages 1103-1113

Compensation mechanism in vanadium and gallium doped CdTe and (Cd,Zn)Te

(9) Joerger, W a Laasch, M a Kunz, T a Fiederle, M a Meinhardt, J a Benz, K W a Scholz, K b Wendl, W b Muller Vogt G b

a UNIVERSITY OF FREIBURG (Germany)

b UNIVERSITY OF KARLSRUHE (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CRYSTAL GROWTH FROM MELT; CRYSTALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GALLIUM; MATHEMATICAL MODELS; PHASE TRANSITIONS; PHOTOLUMINESCENCE; VANADIUM; VAPOR PHASE EPITAXY;

CHARGE STATE; COMPENSATION MECHANISM; COMPENSATION MODEL; PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY; TIME DEPENDENT CHARGE MEASUREMENT;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0031352878 PISSN: 02321300 EISSN: None Source Type: Journal
DOI: 10.1002/crat.2170320813 Document Type: Article

Times cited : (18)

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