Self-cleaning effect and compensation mechanism in Cl-doped high resistivity cadmium telluride

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3794, Issue , 1999, Pages 88-95

  Baventsov, V ^a   Corregidor, V ^a   Benz, K ^a   Feltgen, T ^a   Fiederle, M ^a   Dieguez, E ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHLORINE; CRYSTAL GROWTH; ENERGY DISPERSIVE SPECTROSCOPY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; ZINC;

HIGH RESISTIVITY MATERIAL; SELF CLEANING EFFECT;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033326389     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (23)