RF power performance of LDMOSFETs on SOI: An experimental comparison with bulk Si LDMOSFETs

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 43-46

  Fiorenza, J G ^a   del Alamo, J A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ION IMPLANTATION; POLYSILICON; POSITIVE IONS; POWER ELECTRONICS; SEMICONDUCTOR DOPING; SILICA; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES; WIRELESS TELECOMMUNICATION SYSTEMS;

POWER ADDED EFFICIENCY; RADIO FREQUENCY POWER APPLICATION; SINGLE-CHIP WIRELESS APPLICATION; SINKER IMPLANT;

MOSFET DEVICES;

EID: 0034878611     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. High efficiency submicron gate LDMOS power FET for low voltage wireless communications
2. A RF power LDMOS device on SOI
3. t of 6.9 GHz
4. A SOI LDMOS/CMOS/BJT technology for fully-integrated RF power amplifiers
5. TFSOI - Can it meet the challenge of single chip portable wireless systems?
6. A 900MHz SOI fully-integrated RF power amplifier for wireless transceivers