Low output resistance charge pump for flash memory programming

Records of the IEEE International Workshop on Memory Technology, Design and Testing

Volumn , Issue , 2001, Pages 99-104

  Khouri, Osama ^a   Gregori, Stefano ^a   Micheloni, Rino ^b   Soltesz, Dario ^a   Torelli, Guido ^a  

^a UNIVERSITY OF PAVIA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; COMPUTER PROGRAMMING; COMPUTER SIMULATION; ELECTRIC RESISTANCE; MULTIPLYING CIRCUITS; TIMING CIRCUITS;

MEMORY DESIGN;

PROM;

EID: 0034876893     PISSN: 10874852     EISSN: None     Source Type: Journal    
DOI: 10.1109/MTDT.2001.945236     Document Type: Article

References (10)

1. Stress-induced current in thin silicon dioxide film
2. A multilevel-cell 32 Mb Flash memory
3. Nonvolatile multilevel memories for digital applications
4. On-chip high voltage generation in MNOS integrated circuits using an improved voltage multiplier technique
5. A dynamic analysis of the Dickson charge pump circuit
6. A 5V-only operation 0.6-μm flash EEPROM with row decoder scheme in triple-well structure
7. Fast voltage regulator for multilevel Flash memories
8. An improved method for programming a word-erasable EEPROM
9. A 90-ns one-million erase/program cycle 1-Mbit flash memory
10. 2 3-V-only 50-MHz 64Mb 2-b/cell CHE NOR flash memory