Long-wavelength infrared InAs/InGaSb type-II superlattice photovoltaic detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4288, Issue , 2001, Pages 183-190

  Anselm, K Alex ^a   Ren, Hongwen ^a   Vilela, Mauro ^a   Zheng, Jun ^a   Lin, C H T ^a   Nathan, Vaidya ^b   Brown, Gail J ^b  

^a APPLIED OPTOELECTRONICS INC   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC PROPERTIES; FINITE ELEMENT METHOD; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; OPTICAL DESIGN; OPTICAL PROPERTIES; PHOTODIODES; QUANTUM OPTICS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES;

PHOTOVOLTAIC DETECTORS; SEMICONDUCTING INDIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ANTIMONY; WAVELENGTHS;

INFRARED DETECTORS;

EID: 0034875047     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.429405     Document Type: Article

References (12)