A 0.35 μm CMOS 2.5 GHz complementary-GM VCO using PMOS inversion mode varactors

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 49-52

  Bunch, R ^a   Raman, S ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC LOSSES; MOSFET DEVICES; NEGATIVE RESISTANCE; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE; TUNING; VARACTORS;

FREQUENCY TUNING; PMOS INVERSION MODE VARACTOR; SINGLE-ENDED TEST SETUP;

VARIABLE FREQUENCY OSCILLATORS;

EID: 0034863784     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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9. An innovative modelization of loss mechanism in silicon integrated inductors
10. On the use of MOS varactors in RF VCO's